[72] "Excessive Oxygen Peroxide Model-Based Analysis of PBS and NBIS Instabilities in Self-Aligned Top-Gate Coplanar IGZO TFTs"

S. Choi, J. Park, S.-H. Hwang, C. Kim, Y.-S. Kim, S. Oh, J. H. Baeck, J. U. Bae, J. Noh, S.-W. Lee, K.-S. Park, J.-J. Kim, S. Y. Yoon, H.-I. Kwon, D. H. Kim.

"Excessive Oxygen Peroxide Model-Based Analysis of Positive-Bias-Stress and Negative-Bias-Illumination-Stress Instabilities in Self-Aligned Top-Gate Coplanar In–Ga–Zn–O Thin-Film Transistors"

Advanced Electronic Materials, DOI: 10.1002/aelm.202101062, 2023-01