[62] "Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles"

A. J. Tan, Y.-H. Liao, L.-C. Wang, N. Shanker, J.-H. Bae, C. Hu, S. Salahuddin

"Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles"

IEEE Electron Device Letters, vol. 42(7), pp.994-997 , DOI: 10.1109/LED.2021.3083219, 2021-5