J. T. Jang†, J. Min†, Y. Hwang, S.-J. Choi, D. M. Kim, H. Kim*, and D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors)
"Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System"
IEEE Access, vol. 8, pp. 192304-192311, doi: 10.1109/ACCESS.2020.3032188, 2020-10