M. Hoffmann, A. J. Tan, N. Shanker, Y.-H. Liao, L.-C. Wang, J.-H. Bae, C. Hu, and S. Salahuddin*
"Write Disturb-Free Ferroelectric FETs With Non-Accumulative Switching Dynamics"
IEEE Electron Device Letters, vol. 43, pp. 2097-2100, DOI: 10.1109/LED.2022.3212330, 2022-11