[41] "Fowler–Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications"

S. Choi, G. W. Yang, S. Lee, J. Park, C. Kim, J. Park, H.-S. Choi, N. Lee, G.-J. Kim, Y. Kim, M. Kang, C. Kim, J.-H. Bae and D. H. Kim*

"Fowler–Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications"

IEEE Transactions on Electron Devices, vol. 70, no. 1, pp. 48-52, DOI: 10.1109/TED.2022.3221028, 2022-11