[40] "Device modeling of two-steps oxygen anneal-based submicron IGZO back-end-of-line field-effect transistor enabling SCE suppression"

D. Kim, J.-H. Kim, W. S. Choi, T. J. Yang, J. T. Jang, A. Belmonte, N. Rassoul, S. Subhechha, R. Delhougne, G. S. Kar, W. Lee, M. H. Cho, D. Ha, and Dae Hwan Kim*

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Scientific Reports, vol. 12, no. 1, pp. 1-13, DOI: 10.1038/s41598-022-23951-x, 2022-11