[34] "Fast Read-After-Write and Depolarization Fields in High Endurance n-Type Ferroelectric FETs"

M. Hoffmann, A. J. Tan, N. Shanker, Y.-H. Liao, L.-C. Wang, J.-H. Bae, C. Hu, and S. Salahuddin*

"Fast Read-After-Write and Depolarization Fields in High Endurance n-Type Ferroelectric FETs"

IEEE Electron Device Letters, vol. 43, pp. 717-720, DOI: 10.1109/LED.2022.3163354, 2022-04