[30] "Excessive Oxygen Peroxide Model-Based Analysis of PBS and NBIS Instabilities in Self-Aligned Top-Gate Coplanar In--Ga--Zn--O TFTs"

S. Choi†, J. Park†, S. -H. Hwang, C. Kim, Y. -S. Kim, S. Oh, J. H. Baeck, J. U. Bae, J. Noh, S. -W. Lee, K. -S. Park, J. -J. Kim, S. Y. Yoon, H. -I. Kwon, and D. H. Kim(†These authors are co-first aut

"Excessive Oxygen Peroxide Model-Based Analysis of Positive-Bias-Stress and Negative-Bias-Illumination-Stress Instabilities in Self-Aligned Top-Gate Coplanar In--Ga--Zn--O Thin-Film Transistors"

Advanced Electronic Materials, DOI: 10.1002/aelm.202101062, 2022-01