[26] "Effect of the Gate Dielectric Layer of Flexible InGaZnO Synaptic Thin-Film Transistors on Learning Behavior"

§S. Park, §J. T. Jang, §Y. Hwang, H. Lee, W. S. Choi, D. Kang, C. Kim, H. Kim,* and D. H Kim*(§These authors equally contributed to this work & *co-corresponding authors)

"Effect of the Gate Dielectric Layer of Flexible InGaZnO Synaptic Thin-Film Transistors on Learning Behavior"

ACS Applied Electronic Materials, vol. 3, no.9, pp. 3972-3979, DOI: 10.1021/acsaelm.1c00517, 2021-08