[25] "Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors"

J.-H. Bae, D. Kwon*, S. Cheema, A. J. Tan, C. Hu, and S. Salahuddin*, (*co-corresponding authors)

"Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors"

IEEE Electron Device Letters, vol. 41, no. 11, pp. 1637-1640, doi: 10.1109/LED.2020.3028339, 2020-11