[19] "A compact model for PCM considering the ratio of vertical-to-lateral crystal growth rate for the design of cross-point storage-class"

D. Kim, J. T. Jang, D. M. Kim, S.-J. Choi, S. Ban, M. Shin, H. Lee, H. D. Lee, H.-S. Mo, D. H. Kim*(*Corresponding author)

"A physics-based compact model for phase-change memory considering the ratio of vertical-to-lateral crystal growth rate for the design of cross-point storage-class memory"

Solid-State Electronics, 2021, 107955, ISSN 0038-1101, https://doi.org/10.1016/j.sse.2020.107955., 2021-01