[16] "Impact Ionization and Hot-Carrier Degradation in Saddle-Fin and Buried-Gate Transistor of DRAM at Cryogenic Temperature"

J. Park, N. Lee, G. -J. Kim, H. -S. Choi, D. H. Kim, C. Kim, M. Kang, and Y. Kim

"Impact Ionization and Hot-Carrier Degradation in Saddle-Fin and Buried-Gate Transistor of Dynamic Random Access Memory at Cryogenic Temperature"

IEEE Electron Device Letters, vol. 42, no. 5, pp. 653-656, doi: 10.1109/LED.2021.3067109., 2021-05