[14] "Observation of Divacancy Formation for ZnON Thin-Film Transistors with Excessive N content"

J. T. Jang†, H. -D. Kim†, C. Kim, S. -J. Choi, J. -H. Bae, D. M. Kim, H. -S. Kim*, and D. H. Kim*(†These authors equally contributed to this work)(*Corresponding author)

"Observation of Divacancy Formation for ZnON Thin-Film Transistors with Excessive N content"

IEEE Electron Device Letters, doi: 10.1109/LED.2021.3077908., 2021-05