H. J. Yang, S.-J. Choi, D. M. Kim, D. W. Kwon, D. H. Kim and J.-H. Bae*
"Effect of Oxygen Contents in IGZO Channels on Ferroelectric Memory Properties"
The 29th Korean Conference on Semiconductors, 2022-01
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[24] "Effect of Oxygen Contents in IGZO Channels on Ferroelectric Memory Properties"
[24] "Effect of Oxygen Contents in IGZO Channels on Ferroelectric Memory Properties"
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