[23] "Analysis of threshold voltage shift and field-effect mobility behavior of IGZO TFTs under current stress at cryogenic temperature"

S. Lee, J. Park, G. W. Yang, D. M. Kim, S.-J. Choi, J.-H. Bae, C. Kim, and D. H. Kim*

"Analysis of threshold voltage shift and field-effect mobility behavior of IGZO TFTs under current stress at cryogenic temperature"

The 29th Korean Conference on Semiconductors, 2022-01