[13] "Experimental Observation of the Variation of Oxygen Vacancy-Related DoS in InGaZnO TFTs under the Negative Bias Illumination Stress"

G. W. Yang, J. Park, S. Choi, D. M. Kim, S.-J. Choi, J.-H. Bae, and D. H. Kim

"Experimental Observation of the Variation of Oxygen Vacancy-Related Density of States in InGaZnO TFTs under the Negative Bias Illumination Stress"

The 28th Korean Conference on Semiconductors, 2021-01