[12] "Extraction of Interface Traps over the Bandgap through PVE and PCE in Si MOSFETs under Optical Excitation"

J. H. Ryu*, H. B. Yoo*, J. Yu, H. Kim, J.-H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim(*These authors equally contributed to this work)

"Extraction of Interface Traps over the Bandgap through Photovoltaic and Photoconductive Effects in Si MOSFETs under Optical Excitation"

The 28th Korean Conference on Semiconductors, 2021-01